FDP8874
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP8874
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 110 W 30 V Continuous Drain Current (ID):114 A 72 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| Number of Elements | 1 |
| Current Rating | 121 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 110 W |
| Power Dissipation | 110 W |
| Number of Channels | 1 |
| Input capacitance | 3.13 nF |
| Continuous Drain Current (ID) | 114 A |
| Rds On Max | 5.3 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 10 ns |
| Turn-Off Delay Time | 44 ns |
| Element Configuration | Single |
| Fall Time | 31 ns |
| Rise Time | 128 ns |
| Gate Charge | 72 nC |
| Drain to Source Resistance | 3.6 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
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